Large-Signal Nonlinear Model for MESFET Triode and Saturation Zones
نویسنده
چکیده
This paper presents a new large-signal nonlinear model for the GaAs MESFET triode and saturation zones. The model is specially tailored for simulating nonlinear distortion of RF circuits, in which the active device is biased in those regions. This new model will be compared to similar results obtained from a previously presented model and to real measurements of a microwave MESFET from Microwave Technologies.
منابع مشابه
Efficient Neural-Based Large-Signal and Isothermal Models for the Dual Gate MESFET
This paper presents neural-based large-signal and isothermal models for the dual gate MESFET as efficient alternatives to existing nonlinear models for such a complex device. The developed neural model is a combination of two sub-models; a static model represented by DC current-voltage characteristics and a dynamic model represented by pulsed current-voltage characteristics. The isothermal mode...
متن کاملLarge- and Small-Signal IMD Behavior of Microwave Power Amplifiers
In this paper, large-signal intermodulation distortion (IMD) sweet spots in microwave power amplifiers are studied and predicted using a new mathematical basis. The variations in the IMD versus drive pattern with active bias point and the terminating matching networks are investigated. This nonlinear distortion model enabled the design of power amplifiers specially tailored to present a desired...
متن کاملA Large-signal Compatible Dual-gate Mesfet Dc Model
This paper presents a simple yet powerful dualgate MESFET (DGFET) DC model. It is based on a single 3-dimensional power series expression and provides a high degree of freedom making it generally applicable. Further, it enables analytical parameter extraction. The model is capable of tracking I/V measurements and derivatives in a large bias range and, hence, is large-signal compatible. Results ...
متن کاملNeural networks for large- and small-signal modeling of MESFET/HEMT transistors
The design of microwave and millimeter-wave circuits and the increasing integration of hybrid and monolithic circuits has reinforced the need of accurate large and small-signal device models to improve the performance of these circuits and to minimize the number of design and fabrication steps required. Therefore, it is very important for efficient CAD tools to have good modeling approaches abl...
متن کاملA Realistic Large-Signal MESFET Model for SPICE
A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented. It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance, and derates with power dissipation. All derivatives are continuous for a realistic description of circuit distortion and...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2001